1/8 january 2004 STP80NF03L n-channel 30v - 0.004 ? -80ato-220 stripfet? ii mosfet . typical r ds (on) = 0.004 ? exceptional dv/dt capability 100% avalanche tested low threshold drive description this power mosfet is the latest development of st- microelectronics unique ?single feature size?? strip- based process. the resulting transistor shows ex- tremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufactur- ing reproducibility. applications high current, high speed switching motor control, audio amplifiers dc-dc & dc-ac converters automotive environment (injection,abs, air-bag ,lampdrivers etc.) ordering information type v dss r ds(on) i d STP80NF03L 30 v < 0.0045 ? 80 a sales type marking package packaging STP80NF03L p80nf03l to-220 tube to-220 1 2 3 internal schematic diagram obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
STP80NF03L 2/8 absolute maximum ratings (#) current limited by package. ( ) pulse width limited by safe operating area. (1) i sd 80a, di/dt 240 a/s, v dd =24v;t j t jmax. thermal data avalanche characteristics electrical characteristics (t case =25 c unless otherwise specified) off/on symbol parameter value unit v ds drain-source voltage (v gs =0) 30 v v dgr drain-gate voltage (r gs =20k ? ) 30 v v gs gate-source voltage 20 v i d (#) drain current (continuous) at t c =25 c 80 a i d (#) drain current (continuous) at t c = 100 c 80 a i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c =25 c 300 w derating factor 2.0 w/ c dv/dt (1) peak diode recovery voltage slope 2.0 v/ns t stg storage temperature ? 65 to 175 c t j max. operating junction temperature 175 c rthj-case thermal resistance junction-case max 0.5 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose typ 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 40 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =20v) 2.3 j symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250a,v gs =0 30 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating 1a v ds = max rating, t c =125 c 10 a i gss gate-body leakage current (v ds =0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds =v gs ,i d = 250 a 11.5 2.5 v r ds(on) static drain-source on resistance v gs =10v,i d =40a v gs =4.5v,i d =40a 0.004 0.0045 0.0045 0.0065 ? ? obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
3/8 STP80NF03L electrical characteristics (continued) dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15 v , i d =15a 50 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 5500 pf c oss output capacitance 1670 pf c rss reverse transfer capacitance 290 pf symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =15v,i d =40a r g =4.7 ? v gs =4.5v (resistive load, figure 3) 30 ns t r rise time 270 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =24v,i d = 80a, v gs =4.5v 85 23 40 110 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd =15v,i d =40a, r g =4.7 ?, v gs =4.5v (resistive load, figure 3) 110 95 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp =24v,i d =80a, r g =4.7 ?, v gs =4.5v (inductive load, figure 5) 125 75 125 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 80 a i sdm (1) source-drain current (pulsed) 320 a v sd (2) forwardonvoltage i sd =80a,v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =80a,di/dt=100a/s, v dd =20v,t j = 150 c (see test circuit, figure 5) 75 0.15 4 ns c a obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
STP80NF03L 4/8 transconductance thermal impedance safe operating area transfer characteristics output characteristics static drain-source on resistance obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
5/8 STP80NF03L normalizedbreakdownvoltagevs temperature normalized on resistance vs temperature capacitance variations gate charge vs gate-source voltage normalized gate threshold voltage vs temp. source-drain diode forward characteristics obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
STP80NF03L 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
7/8 STP80NF03L dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
STP80NF03L 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
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